microsemi reserves the right to change, without notice, th e specifications and informati on contained herein. visit our web site at www.microsemi.com or contact our factory direct. 0912LD20 20 watts, 28 volts pulsed avionics 960 to 1215 mhz ldmos fet general description the 0912LD20 is a common source n- channel enhancement mode lateral mosfet capable of providing 20w pk of rf power from 960 to 1215 mhz. the device is nitride passivated and utilizes gold metallization to ensure highest mttf. the transistor includes input and output prematch for broadband capability. low thermal resistance package reduces junction temperature, extends life. case outline 55qt (common source) absolute maximum ratings power dissipation device dissipation @25 c (p d ) 60 w voltage and current drain-source (v dss ) 35v gate-source (v gs, v ds =0) 20v temperatures storage temperature -40 to +150 c operating case temperature +100 c electrical charac teristics @ 25 c symbol characteristics test conditions min typ max units bv dss drain-source breakdown v gs = 0v, i d = 1ma 65 v i dss drain-source leakage current v ds = 28v, v gs = 0v 50 a i gss gate-source leakage current v gs = 10v, v ds = 0v 1 a v gs(th) gate threshold voltage v ds = 10v, i d = 3ma 3 5 v v ds(on) drain-source on voltage v gs = 10v, i d = 250ma 0.23 v g fs forward transconductance v ds = 10v, i d = 125ma 590 ma/v jc 1 thermal resistance 0.3 oc/w functional characteristics @ 25 c, vds = 28v, i dq = 80ma g ps common source power gain pulse width = 32 s, ltdc=2% 14 15 db pd pulse droop f=960/1215 mhz, p out = 20w 0.5 db d drain efficiency f = 960 mhz, p out = 20w 40 42 % load mismatch f = 1090 mhz, p out = 20w 5:1 notes: 1. at rated output power and pulse conditions 2. pulse format 1: 32s, 2% long term duty factor rev. a - may 2008 downloaded from: http:///
microsemi reserves the right to change, without notice, th e specifications and informati on contained herein. visit our web site at www.microsemi.com or contact our factory direct. 0912LD20 pw = 32us, dc=2%: typical data 0912LD20 i nput/output (typical) 0.0 5.0 10.0 15.0 20.0 25.0 30.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 input power (w) ouput power (w) 960mhz 1090mhz 1215mhz 0912LD20 input/output (typical) 0.0 5.0 10.0 15.0 20.0 25.0 30.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 input power (w) ouput power (w) 960mhz 1090mhz 1215mhz 0912LD20 input return loss (typical) -10.00 -9.00 -8.00 -7.00 -6.00 -5.00 -4.00 -3.00 -2.00 -1.00 0.00 0.0 5.0 10.0 15.0 20.0 25.0 30.0 output power (w) input return loss (db) 960mhz 1090mhz 1215mhz 0912LD20 efficiency (typical) 10.0% 20.0% 30.0% 40.0% 50.0% 60.0% 70.0% 0.0 5.0 10.0 15.0 20.0 25.0 30.0 output pow e r (w ) effi. (%) 960mhz 1090mhz 1215mhz mode-s pulse format typical data freq = 1090 mhz (performance optimized at 1090 mhz) vdd = 28v, idq = 80ma, class-ab bias mode-s pulse burst: 0.5us on/0.5 us off, 128 pulses, repeated every 3.2 ms (ldtc = 2%) pulse # gp r.l(input) droop d b mw d bd b mw d b( d b ) 1 43.0 20.0 16.90 26.10 0.41 -12.60 -0.1 64 42.9 19.4 16.77 26.10 0.41 128 42.9 19.5 16.80 26.10 0.41 pout pin downloaded from: http:///
microsemi reserves the right to change, without notice, th e specifications and informati on contained herein. visit our web site at www.microsemi.com or contact our factory direct. 0912LD20 0912LD20 test circuit layout 0912LD20 test circuit component designations and values part description part description c01, c12, c13, c22 43pf chip capacitor (atc 100a) c18 22uf, 63v electrolytic capacitor c03, c10, c11 3.3pf chip capacitor (atc 100a) c17 47uf 63v electrolytic capacitor c04, c05 2.4pf chip capacitor (atc 100a) c16 470uf, 63v electrolytic capacitor c06, c07 9.1pf chip capacitor (atc 100a) c19, c20 1uf chip capacitor c08, c09 7.5pf chip capacitor (atc 100a) c14, c21 1000pf chip capacitor c05 4.7pf chip capacitor (atc 100a) c15 1nf chip capacitor c16 3.0pf chip capacitor (atc 100a) c02, c03, 0.7pf chip capacitor (atc 100b) r01, r04 15 ? , 1/4w chip resistor l01 6 turns, 24 awg, idia 0.092 r02, r03 200, 1/4w chip resistor r05 82.5 ? , 1/4w chip resistor pcb rogers 6006, r =6.15, 25mils, 1oz m01 36 x 295 mils (w x l) m02 36 x 200 mils (w x l) m03 180 x 90 mils (w x l) m04 36 x 387 mils (w x l) m05 130 x 130 mils (w x l) m06 200 x 165 mils (w x l) m07 700 x 200 mils (w x l) m08 420 x 429 mils (w x l) m09 480 x 415 mils (w x l) m10 454 x 18 mils (w x l) m11 494 x 392 mils (w x l) m12 36 x 50 mils (w x l) m13 494 x 510 mils (w x l) m14 110 x 760 mils (w x l) m15 300 x 150 mils (w x l) m16 36 x 183 mils (w x l) m17 36 x 278 mils (w x l) u1 adg419, analog device downloaded from: http:///
microsemi reserves the right to change, without notice, th e specifications and informati on contained herein. visit our web site at www.microsemi.com or contact our factory direct. 0912LD20 z s z l typical impedance values frequency (mhz) z s ( ? ) z l ( ? ) 960 1.61 - j0.35 6.30 - j0.49 1090 2.26 + j0.40 4.98 - j0.82 1215 3.68 + j0.90 4.85 + j0.23 * v ds = 28v, i dq = 80ma, p out = 20w * pulse format: 32s, 2% long term duty factor input matching network output matching network downloaded from: http:///
microsemi reserves the right to change, without notice, th e specifications and informati on contained herein. visit our web site at www.microsemi.com or contact our factory direct. 0912LD20 downloaded from: http:///
|
